SVSP11N65D Datasheet - Silan Microelectronics

SVSP11N65D - 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and super

SVSP11N65D Features

* 11A,650V, RDS(on)(typ.)=0.33@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220F-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVSP11N65DD2TR SVSP11N65

Datasheet Details

SVSP11N65D

Silan Microelectronics

408.93 KB

650v super junction mos power transistor.

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