SVSP11N65FJD, SVSP11N65D Datasheet - Silan Microelectronics

SVSP11N65FJD 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and super.

SVSP11N65FJD Features

* 11A,650V, RDS(on)(typ.)=0.33@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220F-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVSP11N65DD2TR SVSP11N65

SVSP11N65D-SilanMicroelectronics.pdf

SVSP11N65FJD Datasheet Preview — This datasheet PDF includes multiple part numbers: SVSP11N65FJD, SVSP11N65D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVSP11N65FJD, SVSP11N65D

Manufacturer:

Silan Microelectronics

File Size:

408.93 KB

Description:

650v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVSP11N65FJD, SVSP11N65D.
Please refer to the document for exact specifications by model.

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SVSP11N65FJD SVSP11N65D 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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