SVSP11N65S

650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

SVSP11N65S Features

* 11A,650V, RDS(on)(typ.)=0.33@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220F-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVSP11N65DD2TR SVSP11N65

SVSP11N65S General Description

SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and super.

SVSP11N65S Datasheet (408.93 KB)

SVSP11N65S Datasheet Preview — Preview of SVSP11N65S PDF

Datasheet Details

Part number:

SVSP11N65S

Manufacturer:

Silan Microelectronics

File Size:

408.93 KB

Description:

650v super junction mos power transistor.

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SVSP11N65S 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVSP11N65S Features

SVSP11N65S General Description

Datasheet Details

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Description:

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