Part number:
SVT033R5NAT
Manufacturer:
Silan Microelectronics
File Size:
271.10 KB
Description:
N-channel mosfet.
* 180A,30V,RDS(on)(typ.)=2.8m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 TO-220HW-3L ORDERING INFORMATION Part No. SVT033R5NAT Package TO-220HW-3L Marking 033R5NAT Hazardous Substance Control Pb free
SVT033R5NAT Datasheet (271.10 KB)
SVT033R5NAT
Silan Microelectronics
271.10 KB
N-channel mosfet.
📁 Related Datasheet
SVT033R5NT - N-CHANNEL MOSFET
(Silan Microelectronics)
Silan Microelectronics
SVT033R5NT_Datasheet
180A, 30V N-CHANNEL MOSFET
DESCRIPTION
The SVT033R5NT is an N-channel enhancement mode power MOS field .
SVT03380PSA - P-CHANNEL MOSFET
(Silan Microelectronics)
Silan Microelectronics
SVT03380PSA_Datasheet
-6.5A, -30V P CHANNEL MOSFET
DESCRIPTION
SVT03380PSA is a P channel enhancement mode power MOS field e.
SVT03100ND - 30V N-CHANNEL MOSFET
(Silan Microelectronics)
Silan Microelectronics
SVT03100ND_Datasheet
60A, 30V N-CHANNEL MOSFET
DESCRIPTION
SVT03100ND is an N-channel enhancement mode power MOS field effect.
SVT03100NL3 - N-CHANNEL MOSFET
(Silan Microelectronics)
Silan Microelectronics
SVT03100NL3_Datasheet
45A, 30V N-CHANNEL MOSFET
DESCRIPTION
The SVT03100NL3 is an N-channel enhancement mode power MOS fiel.
SVT03110PL3 - P-CHANNEL MOSFET
(Silan Microelectronics)
Silan Microelectronics
SVT03110PL3_Datasheet
-46A, -30V P CHANNEL MOSFET
DESCRIPTION
SVT03110PL3 is a P channel enhancement mode power MOS field ef.
SVT03120NL2 - N-CHANNEL MOSFET
(Silan Microelectronics)
Silan Microelectronics
SVT03120NL2_Datasheet
12A, 30V N-CHANNEL MOSFET
DESCRIPTION
The SVT03120NL2 is an N-channel enhancement mode power MOS fiel.
SVT034R0NL5 - N-CHANNEL MOSFET
(Silan Microelectronics)
Silan Microelectronics
SVT034R0NL5_Datasheet
100A, 30V N-CHANNEL MOSFET
DESCRIPTION
SVT034R0NL5 is an N-channel enhancement mode power MOS field ef.
SVT034R6ND - 30V N-channel enhancement-mode MOSFET
(Silan Microelectronics)
SVT034R6ND(T)
120A、30V N
SVT034R6ND(T) N MOS LVMOS 。 、。
。
120A,30V,RDS(on)()=3.5m@VGS=10V dv/dt 100% RoHS
VDS .