SVT033R5NAT Datasheet - Silan Microelectronics

SVT033R5NAT N-CHANNEL MOSFET

The SVT033R5NAT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely us.

SVT033R5NAT Features

* 180A,30V,RDS(on)(typ.)=2.8m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 TO-220HW-3L ORDERING INFORMATION Part No. SVT033R5NAT Package TO-220HW-3L Marking 033R5NAT Hazardous Substance Control Pb free

SVT033R5NAT-SilanMicroelectronics.pdf