SVT033R5NT Datasheet - Silan Microelectronics

SVT033R5NT N-CHANNEL MOSFET

The SVT033R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely use.

SVT033R5NT Features

* 180A, 30V, RDS(on)(typ.)=2.8m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 1 23 TO-220-3L ORDERING INFORMATION Part No. SVT033R5NT Package TO-220-3L Marking 033R5NT Hazardous Substance Control Pb free Packing Type Tube ABSOLUTE MAXI

SVT033R5NT-SilanMicroelectronics.pdf