SGTP40V120FDB2P7

1200V FIELD STOP IGBT

Silan Semiconductors

* low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES

* 40A, 1200V, VCE(sat)(typ.)=1.9V@IC=40A

* Low conduction loss

* Ultra-fast switching

* High input impedance

* TJmax=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATU

SGTP40V120FDB2P7

Silan Semiconductors

480.64 KB

1200v field stop igbt.

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SGTP40V120FDB2P7 1200V FIELD STOP IGBT Silan Semiconductors

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