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SGTP75V65SDS1P7 650V FIELD STOP IGBT

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Description

Silan Microelectronics SGTP75V65SDS1P7_Datasheet 75A, 650V FIELD STOP IGBT .
The SGTP75V65SDS1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss.

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Features

* low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES
* 75A, 650V, VCE(sat)(typ. )=1.42V@IC=75A
* Low conduction loss
* Ultra-fast switching
* High input impedance
* TJmax. =175C C 2 1 G 3 E 123 TO-247-3L NOMENCLAT

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