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SGTP75V65FDB1P4B - 650V FIELD STOP IGBT

Datasheet Summary

Description

The SGTP75V65FDB1P4B field stop IGBT adopts Silan Field Stop 5 technology.

Features

  • low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields.

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Datasheet Details

Part number SGTP75V65FDB1P4B
Manufacturer Silan Semiconductors
File Size 457.29 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTP75V65FDB1P4B Datasheet
Additional preview pages of the SGTP75V65FDB1P4B datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SGTP75V65FDB1P4B_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTP75V65FDB1P4B field stop IGBT adopts Silan Field Stop 5 technology. It features low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES  75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A  Low conduction loss  Fast switching  High input impedance  TJmax=175C C 1 4 G 3 2 E TO-247B-4L NOMENCLATURE IGBT series Industrial grade Current, 75: 75A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop5++ A : Field Stop 6 Voltage, 65:650V 120: 1200V SGT P 75 V 65 F D B 1 P4B Package P4B : TO-247B-4L 1,2,3 : Version No.
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