SSF1090DX
Silikron
1.44MB
Mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive ava
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SSF1090D - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
100V 60mΩ (typ.)
ID 15A ①
TO-252 (D-PAK)
Features and Benefits:
Advanced MOSFET process technology .
SSF1090 - N-Channel enhancement mode trench power MOSFET
(Silikron Semiconductor)
SSF1090
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low .
SSF1090 - 100V N-Channel MOSFET
(Good-Ark)
SSF1090
100V N-Channel MOSFET
Features Advanced trench process technology Ideal for convertors and power controls High density cell design for .
SSF1090A - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
100V
RDS(on) 72mΩ(typ)
ID 15A ①
D2PAK
Features and Benefits:
Advanced tr.
SSF1006 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
100V 4.6mΩ (typ.)
ID 200A ①
Features and Benefits:
TO220
Advanced MOSFET process technology Speci.
SSF1006A - MOSFET
(Silikron)
SSF1006A
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current
ID =200A B.
SSF1006H - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
100V 5mΩ (typ.)
ID 200A ①
Features and Benefits:
TO-247
Advanced MOSFET process technology Specia.
SSF1007 - MOSFET
(Silikron)
Main Product Characteristics:
SSF1007
VDSS RDS(on)
ID
100V 5.8mohm(Typ)
130A
Features and Benefits:
SSF1007 TOP.
SSF1009 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
100V
RDS(on) 7.2mohm(typ.)
ID 100A
Features and Benefits:
TO220
Advanced MOSFET process technology Speci.
SSF1010 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
100V
RDS(on) 9.5mohm(typ.) ID 100A
Features and Benefits:
TO220
Advanced .