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SSF3051G7 MOSFET

SSF3051G7 Description

                                 Main Product Characteristics: VDSS -30V RDS(on) 45mohm(typ.) ID -4A SOT23-6  .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche ra.

SSF3051G7 Features

* Advanced trench MOSFET process technology
* Special designed for buttery protection, load switching and general power management
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature SSF3051G

SSF3051G7 Applications

* Absolute max Rating: Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit -30 ±25 -4 -25 1.7 -55 To 150 Unit V V A A W ℃ Thermal Res

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MOSFET Silikron Semiconductor
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