SLW3015S Datasheet, Inductor, Sunltech

✔ SLW3015S Features

✔ SLW3015S Application

PDF File Details

Part number:

SLW3015S

Manufacturer:

Sunltech

File Size:

529.58kb

Download:

📄 Datasheet

Description:

Wire wound smd power inductor.

Datasheet Preview: SLW3015S 📥 Download PDF (529.58kb)
Page 2 of SLW3015S Page 3 of SLW3015S

📁 Related Datasheet

SLW3015 - Wire Wound SMD Power Inductor (Sunltech)
◆ Features 1、Magnetic-resin shielded construction reduces buzz noise to ultra-low levels; 2、Metallization on ferrite core results in excellent shock r.

SLW3010 - Wire Wound SMD Power Inductor (Sunltech)
◆ Features 1、Magnetic-resin shielded construction reduces buzz noise to ultra-low levels; 2、Metallization on ferrite core results in excellent shock r.

SLW3012 - Wire Wound SMD Power Inductor (Sunltech)
◆ Features 1、Magnetic-resin shielded construction reduces buzz noise to ultra-low levels; 2、Metallization on ferrite core results in excellent shock r.

SLW10N80UZ - 800V N-Channel MOSFET (Maple Semiconductor)
SLW10N80UZ SLW10N80UZ 800V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technolo.

SLW10N80UZ - N-Channel MOSFET (Maple Semiconductor)
SLW10N80UZ SLW10N80UZ 800V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technolo.

SLW18N50C - N-Channel MOSFET (Maple Semiconductor)
SLW18N50C SLW18N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

SLW201610S - Wire Wound SMD Power Inductor (Sunltech)
SLW201610S Series Wire Wound SMD Power Inductor ◆ Features 1、Magnetic-resin shielded construction reduces buzz noise to ultra-low levels; 2、Metalliza.

SLW20N50C - N-Channel MOSFET (SL SEMI)
SLW20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanc.

SLW24N50C - N-Channel MOSFET (Maple Semiconductor)
SLW24N50C SLW24N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

SLW252010 - Wire Wound SMD Power Inductor (Sunltech)
◆ Features 1、Magnetic-resin shielded construction reduces buzz noise to ultra-low levels; 2、Metallization on ferrite core results in excellent shock r.

TAGS

SLW3015S Wire Wound SMD Power Inductor Sunltech