IRF6N60

POWER MOSFET

Suntac Electronic

IRF6N60 Features

* Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature IRF6N60 PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Front View

IRF6N60 General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers.

IRF6N60 Datasheet (207.81 KB)

IRF6N60 Datasheet Preview — Preview of IRF6N60 PDF

Datasheet Details

Part number:

IRF6N60

Manufacturer:

Suntac Electronic

File Size:

207.81 KB

Description:

Power mosfet.

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IRF6N60 POWER MOSFET Suntac Electronic

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IRF6N60 Features

IRF6N60 General Description

Datasheet Details

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Description:

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