Datasheet4U.com

IRF6N60 - POWER MOSFET

Suntac Electronic

📥 Download Datasheet

IRF6N60 Datasheet Preview — Preview of IRF6N60 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IRF6N60
Manufacturer	Suntac Electronic
File Size	207.81 KB
Description	POWER MOSFET
Datasheet	IRF6N60_SuntacElectronic.pdf

IRF6N60 Product details

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

Features

Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature IRF6N60 PIN.

📁 IRF6N60 Similar Datasheet

IRF60B217 - N-Channel MOSFET (INCHANGE)
IRF60DM206 - N-Channel Power MOSFET (International Rectifier)
IRF60R217 - N-Channel MOSFET (INCHANGE)
IRF610 - N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF6100 - HEXFET Power MOSFET (International Rectifier)
IRF6100PBF - HEXFET Power MOSFET (International Rectifier)
IRF610A - N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF610B - 200V N-Channel MOSFET (Fairchild Semiconductor)

Other Datasheets by Suntac Electronic

IRF6N40 - POWER MOSFET
IRF10N40 - POWER MOSFET
IRF2N60 - POWER MOSFET
IRF7N60 - POWER MOSFET

Published: Jan 12, 2013 |