SSP20N60S - 600V N-Channel MOSFET

SSP20N60S Datasheet Preview — Preview of SSP20N60S PDF

Datasheet Details

Part number	SSP20N60S
Manufacturer	Super Semiconductor
File Size	586.33 KB
Description	600V N-Channel MOSFET
Datasheet	SSP20N60S-SuperSemiconductor.pdf

SSP20N60S Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

650V @TJ = 150°C.
Typ. RDS(on) = 0.16 .
Ultra Low Gate Charge (typ. Qg = 70nC).
100% avalanche tested D GDS TO-220 GD S TO-220F G S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy.

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Published: Apr 26, 2017 |