SSP65R190SFD - 650V N-Channel Super-Junction MOSFET

SSP65R190SFD Datasheet Preview — Preview of SSP65R190SFD PDF

Datasheet Details

Part number	SSP65R190SFD
Manufacturer	Super Semiconductor
File Size	0.99 MB
Description	650V N-Channel Super-Junction MOSFET
Datasheet	SSP65R190SFD-SuperSemiconductor.pdf

SSP65R190SFD Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

Multi-Epi process SJ-FET.
Fast-Recovery body diode.
Extremely Low Reverse Recovery Charge.
700V @TJ = 150 ℃.
Typ. RDS(on) = 0.175Ω.
Ultra Low Gate Charge (typ. Qg = 36.5nC).
100% avalanche tested SSF65R190SFD SSP65R190SFD SSW65R190SFD TO-247 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Sou.

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Published: Jul 29, 2025 |