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TSM2N70 60V N-Channel Enhancement Mode MOSFET

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Description

TSM2N7000 Pin assignment: 1.Gate 2.Source 3.Drain www.DataSheet4U.com 60V N-Channel Enhancement Mode MOSFET VDS = 60V ID = 200mA RDS (on), Vgs .
The TSM2N7000 is produced using high cell density, DMOS technology.

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Datasheet Specifications

Part number
TSM2N70
Manufacturer
Taiwan Semiconductor Company
File Size
144.39 KB
Datasheet
TSM2N70_TaiwanSemiconductorCompany.pdf
Description
60V N-Channel Enhancement Mode MOSFET

Features

* — — — — — High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Ordering Information Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92 Block Diagram Absolute

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