TSM2N70 - 60V N-Channel Enhancement Mode MOSFET

Taiwan Semiconductor Company

Datasheet Details

Part number	TSM2N70
Manufacturer	Taiwan Semiconductor ↗ Company
File Size	144.39 KB
Description	60V N-Channel Enhancement Mode MOSFET
Datasheet	TSM2N70_TaiwanSemiconductorCompany.pdf

The TSM2N7000 is produced using high cell density, DMOS technology.

High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Ordering Information Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92 Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage --- Continuous --- Pulsed Continuous Drain Current Pulsed Drain Current Maximum.

📁 TSM2N70 Similar Datasheet

Other Datasheets by Taiwan Semiconductor Company

Published: Mar 5, 2010 |