TSM2N70 Datasheet - Taiwan Semiconductor Company

TSM2N70 60V N-Channel Enhancement Mode MOSFET

The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500m.

TSM2N70 Features

* High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Ordering Information Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92 Block Diagram Absolute

TSM2N70_TaiwanSemiconductorCompany.pdf