* Advanced trench process technology High density cell design for ultra low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-363 package Block Diagram Ordering Information Part No.
TSM2N7002E Datasheet (234.54 KB)
TSM2N7002E
Taiwan Semiconductor Company
234.54 KB
50v n-channel enhancement mode mosfet.
TSM2N7002E
50V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on),.
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