TSM2NB60 Datasheet - Taiwan Semiconductor

TSM2NB60 600V N-Channel Power MOSFET

TSM2NB60 Features

* Advanced planar process

* 100% avalanche tested

* Pb-free plating

* Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC

* Halogen-free according to IEC 61249-2-21 definition KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) 600 V 4.4

Datasheet Details

TSM2NB60

Taiwan Semiconductor

1.16 MB

600v n-channel power mosfet.

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