* www.DataSheet4U.com Advanced trench process technology High density cell design for low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-23 package Block Diagram
TSM2N7002 Datasheet (158.66 KB)
TSM2N7002
Taiwan Semiconductor Company
158.66 KB
60v n-channel enhancement mode mosfet.
TSM2N7002 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V RDS (on), Vgs @ 10V, Ids @ 500mA = 7.5Ω RDS (on).
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