TSM2N7000 Datasheet - Taiwan Semiconductor Company

TSM2N7000 60V N-Channel Enhancement Mode MOSFET

www.DataSheet4U.comThe TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 200mA DC and can deliver pulsed.

TSM2N7000 Features

* High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Ordering Information Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92 Block Diagram Absolute

TSM2N7000_TaiwanSemiconductorCompany.pdf