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TSM2N7000 60V N-Channel Enhancement Mode MOSFET

TSM2N7000 Description

TSM2N7000 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1.Gate 2.Source 3.Drain VDS = 60V ID = 200mA RDS (on), Vgs @ 10V, Ids @ 500mA = 5.
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TSM2N7000 Features

* — — — — — High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Ordering Information Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92 Block Diagram Absolute

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60V N-Channel Enhancement Mode MOSFET Taiwan Semiconductor Company
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