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TSM2N60S 600V N-Channel Power MOSFET

TSM2N60S Description

TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: 1.Gate 2.Drain 3.Source www.DataSheet4U.com PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 5.
The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

TSM2N60S Features

* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. TSM2N60SCW RP Package SOT-223 Packing

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600V N-Channel Power MOSFET Taiwan Semiconductor Company
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