TSM2N60S Datasheet - Taiwan Semiconductor Company

TSM2N60S 600V N-Channel Power MOSFET

The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-.

TSM2N60S Features

* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. TSM2N60SCW RP Package SOT-223 Packing

TSM2N60S_TaiwanSemiconductorCompany.pdf