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TSM2N60S Datasheet - Taiwan Semiconductor Company

TSM2N60S 600V N-Channel Power MOSFET

The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-.

TSM2N60S Features

* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. TSM2N60SCW RP Package SOT-223 Packing

TSM2N60S Datasheet (401.21 KB)

Preview of TSM2N60S PDF

Datasheet Details

Part number:

TSM2N60S

Manufacturer:

Taiwan Semiconductor Company

File Size:

401.21 KB

Description:

600v n-channel power mosfet.

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TAGS

TSM2N60S 600V N-Channel Power MOSFET Taiwan Semiconductor Company

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