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TSM2N60S Datasheet - Taiwan Semiconductor Company

TSM2N60S_TaiwanSemiconductorCompany.pdf

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Datasheet Details

Part number:

TSM2N60S

Manufacturer:

Taiwan Semiconductor Company

File Size:

401.21 KB

Description:

600v n-channel power mosfet.

TSM2N60S, 600V N-Channel Power MOSFET

The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain-

TSM2N60S Features

* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. TSM2N60SCW RP Package SOT-223 Packing

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