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TSM20N50CN - 500V N-Channel Power MOSFET

TSM20N50CN Description

TSM20N50CN 500V N-Channel Power MOSFET TO-3PN Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 500 RDS(on)(mΩ) 0.3 @ VGS =10V ID .
The TSM20N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

TSM20N50CN Features

* Low RDS(ON) 0.3Ω (Max. ) Low gate charge typical @ 54nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM20N50CN C0 Package TO-3PN Packing 30pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Sou

TSM20N50CN Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: A12 Free Datasheet http://www. datasheetlist. com/

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Datasheet Details

Part number
TSM20N50CN
Manufacturer
Taiwan Semiconductor
File Size
499.21 KB
Datasheet
TSM20N50CN-TaiwanSemiconductor.pdf
Description
500V N-Channel Power MOSFET

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500V N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM20N50CN-like datasheet