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TSM35N10 100V N-Channel Power MOSFET

TSM35N10 Description

TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V .
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TSM35N10 Features

* Advanced Trench Technology Low RDS(ON) 37mΩ (Max. ) Low gate charge typical @ 34nC (Typ. ) Low Crss typical @ 45pF (Typ. ) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channe

TSM35N10 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: B13

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Datasheet Details

Part number
TSM35N10
Manufacturer
Taiwan Semiconductor
File Size
572.70 KB
Datasheet
TSM35N10-TaiwanSemiconductor.pdf
Description
100V N-Channel Power MOSFET

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100V N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM35N10-like datasheet