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1SS357 Datasheet - Toshiba Semiconductor

1SS357 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-70 1SS357 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) VR IFM IO IFSM 40 V 300 mA 100 mA 1A Power dissipation P 200<.

1SS357_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS357

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

201.32 KB

Description:

Silicon epitaxial schottky barrier type diode.

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1SS357 1SS357 Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor

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