1SS357 Datasheet (Toshiba Semiconductor) - Silicon Epitaxial Schottky Barrier Type Diode

1SS357, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-70 1SS357 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) VR IFM IO IFSM 40 V 300 mA 100 mA 1A Power dissipation P 200<