1SS357
Toshiba ↗ Semiconductor
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Silicon epitaxial schottky barrier type diode.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS357
Low Voltage High Speed Switching
z Low forward voltage z Low reverse current z Small pac.
📁 Related Datasheet
1SS350 - Sillicon Epitaxial Schottky Barrier Diode
(Sanyo Semicon Device)
Ordering number :EN3156A
1SS350
Sillicon Epitaxial Schottky Barrier Diode
UHF Detector, Mixer Applications
Features
· Small interterminal capacitanc.
1SS351 - Sillicon Epitaxial Schottky Barrier Diode
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Ordering number :EN3240B
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Features
· Series connection of 2 element.
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1SS352 - Silicon Epitaxial Planar Type Diode
(Toshiba Semiconductor)
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1SS352
1SS352
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)
Small package
L.
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SMD Type
Diodes
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE 1SS352
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Small Package
Low forward voltage
:VF(3) = 0.98 (Typ)
Fast reverse.
1SS352 - Silicon Epitaxial Planar Switching Diode
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1SS352 - Silicon Epitaxial Planar Diode
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FEATURES
z Small package z Low forward voltage z Fast reverse recovery time z Small total capacitance
Pb
Lead-free
P.
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