1SS369 Datasheet - Toshiba Semiconductor

1SS369 Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Small package Low forward voltage: VF (3) = 0.97V (typ.) Low reverse current: IR = 5µA (max) 1SS369 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse voltage Reverse voltage VRM VR 45 40 Maximum (peak) forward current IFM 300 Average forward current IO 100 Surge current (10ms) IFSM 1 Power dissipation P 150 Junction temperature Tj 125 Sto.

1SS369_ToshibaSemiconductor.pdf