1SS369
Toshiba ↗ Semiconductor
131.94 KB
Diode.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS369
Low Voltage High Speed Switching
Small package Low forward voltage: VF (3) = 0.97V (typ.).
📁 Related Datasheet
1SS360 - Silicon Epitaxial Planar Type Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS360
1SS360
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)
Small package
L.
1SS360F - Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS360F
Ultra High Speed Switching Applications
1SS360F
Unit in mm
l Small package
: 1608 Flat lead
l .
1SS361 - Silicon Epitaxial Planar Type Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)
Small package
Low forwa.
1SS361CT - Silicon Epitaxial Planar Type Diode
(Toshiba)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361CT
Ultra High Speed Switching Application
z Small package
z Low forward voltage:
VF (3) = 0.9 V (.
1SS361FV - Silicon Epitaxial Planar Type Diode
(Toshiba)
0.5± 0. 1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361FV
Ultra-High-Speed Switching Applications
AEC-Q101 qualified (Note 1)
Small packag.
1SS361LP3 - ULTRA-SMALL LEADLESS SURFACE MOUNT SWITCHING DIODE
(Diodes)
NEW PRODUCT
1SS361LP3
ULTRA-SMALL LEADLESS SURFACE MOUNT SWITCHING DIODE
Features
Ultra-Small Leadless Surface Mount Package (0.6 x 0.3mm) Ultra.
1SS361LPH4 - SURFACE MOUNT SWITCHING DIODE
(Diodes)
NEW PRODUCT
Features
• Fast Switching Speed • Ultra-Small Leadless Surface Mount Package (1.0 x 0.6mm) • Ultra-Low Profile Package (0.4mm) • Low Forw.
1SS361UDJ - DUAL SURFACE MOUNT SWITCHING DIODE
(Diodes)
ADVANCE INFORMATION
Features
• Fast Switching Speed • Ultra-Small Surface Mount Package (1.0 x 0.8mm) • Ultra-Low Profile Package (0.45mm) • Low Forw.
