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1SS398 Datasheet - Toshiba Semiconductor

1SS398 Silicon Epitaxial Planar Type Diode

1SS398 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS398 High-Voltage, High-Speed Switching Applications Unit: mm Small package : SC-59 Low forward voltage : VF(2) = 1.0 V (typ.) Fast reverse recovery time : trr = 0.5 μs (typ.) Small total capacitance : CT = 2.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 <.

1SS398 Datasheet (619.21 KB)

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Datasheet Details

Part number:

1SS398

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

619.21 KB

Description:

Silicon epitaxial planar type diode.

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1SS398 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor

1SS398 Distributor