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1SS398 Silicon Epitaxial Planar Type Diode

1SS398 Description

1SS398 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS398 High-Voltage, High-Speed Switching Applications Unit: mm * Small package : SC-59 <.

1SS398 Applications

* Unit: mm
* Small package : SC-59
* Low forward voltage : VF(2) = 1.0 V (typ. )
* Fast reverse recovery time : trr = 0.5 μs (typ. )
* Small total capacitance : CT = 2.5 pF (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse V

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Silicon Epitaxial Planar Type Diode Toshiba Semiconductor
Toshiba Semiconductor 1SS398-like datasheet