1SS398 Silicon Epitaxial Planar Type Diode

Toshiba Semiconductor

Description

1SS398 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS398 High-Voltage, High-Speed Switching Applications Unit: mm * Small package : SC-59 <.

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Datasheet Specifications

Part number: 1SS398
Manufacturer: Toshiba ↗ Semiconductor
File Size: 619.21 KB
Datasheet: 1SS398_ToshibaSemiconductor.pdf
Description: Silicon Epitaxial Planar Type Diode

Applications

* Unit: mm
* Small package : SC-59
* Low forward voltage : VF(2) = 1.0 V (typ. )
* Fast reverse recovery time : trr = 0.5 μs (typ. )
* Small total capacitance : CT = 2.5 pF (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse V

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1SS398 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor

Toshiba Semiconductor 1SS398-like datasheet