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1SS391 Datasheet - Toshiba Semiconductor

1SS391 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Low forward voltage: VF (2) = 0.23V (typ.) Small package: SC-61 1SS391 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A 1. CATHODE 1 Power dissipati.

1SS391 Datasheet (558.35 KB)

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Datasheet Details

Part number:

1SS391

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

558.35 KB

Description:

Silicon diode.

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1SS391 Silicon Diode Toshiba Semiconductor

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