1SS391 Datasheet, Diode, Toshiba Semiconductor

PDF File Details

Part number:

1SS391

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

558.35kb

Download:

📄 Datasheet

Description:

Silicon diode.

1SS391 Application

• Applications customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation

TAGS

1SS391

Toshiba Semiconductor

📁 Related Datasheet

1SS390 - Band switching diode (Rohm)
Data Sheet Band Switching Diode 1SS390 Applications High frequency switching Dimensions (Unit : mm) 0.8±0.05 Features 1)Ultra small mold type..

1SS390 - Band swithing diode (SEMTECH)
1SS390 SILICON EPITAXIAL PLANAR DIODE Band Swithing Diode Features • Extremely small surface mounting type • High reliability Applications • High freq.

1SS390 - SURFACE MOUNT PIN DIODE (PAN JIT)
1SS390 SURFACE MOUNT PIN DIODE VOLTAGE 35 Volts POWER 200 mW FEATURES Very low series resistance at 100MHz (0.45 Ω typical@IF=2mA) Low capacitan.

1SS390SMFH - Band Switching Diodes (ROHM)
1SS390SMFH Band Switching Diodes (AEC-Q101 qualified) Data sheet 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 35 V Ct 1.2 pF rF 0..

1SS392 - Silicon Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application 1SS392 Unit: mm z Low forward voltage z Low reverse cu.

1SS393 - Silicon Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application 1SS393 Unit: mm z Low forward voltage z Low reverse cu.

1SS394 - Silicon Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application 1SS394 Unit: mm z Small package z Low forward voltage:.

1SS395 - Silicon Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage:.

1SS396 - Silicon Epitaxial Schottky Barrier Type Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 1SS396 Low Voltage High Speed Switching Unit: mm ⚫ AEC-Q101 qualified (Note 1) ⚫ Sma.

1SS397 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: mm  Small package : SC-70  Low f.