Datasheet4U Logo Datasheet4U.com

1SS392 Datasheet - Toshiba Semiconductor

1SS392 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application 1SS392 Unit: mm z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 <.

1SS392 Datasheet (199.86 KB)

Preview of 1SS392 PDF

Datasheet Details

Part number:

1SS392

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

199.86 KB

Description:

Silicon diode.

📁 Related Datasheet

1SS390 Band switching diode (Rohm)

1SS390 Band swithing diode (SEMTECH)

1SS390 SURFACE MOUNT PIN DIODE (PAN JIT)

1SS390SMFH Band Switching Diodes (ROHM)

1SS391 Silicon Diode (Toshiba Semiconductor)

1SS393 Silicon Diode (Toshiba Semiconductor)

1SS394 Silicon Diode (Toshiba Semiconductor)

1SS395 Silicon Diode (Toshiba Semiconductor)

1SS396 Silicon Epitaxial Schottky Barrier Type Diode (Toshiba Semiconductor)

1SS397 Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)

TAGS

1SS392 Silicon Diode Toshiba Semiconductor

Image Gallery

1SS392 Datasheet Preview Page 2 1SS392 Datasheet Preview Page 3

1SS392 Distributor