Datasheet Details
Part number:
1SS392
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
199.86 KB
Description:
Silicon diode.
1SS392_ToshibaSemiconductor.pdf
1SS392_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
1SS392
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
199.86 KB
Description:
Silicon diode.
1SS392, Silicon Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application 1SS392 Unit: mm z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 <
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