1SS396 Datasheet (Toshiba Semiconductor) - Silicon Epitaxial Schottky Barrier Type Diode

1SS396, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 1SS396 Low Voltage High Speed Switching Unit: mm AEC-Q101 qualified (Note 1) Small package : SC-59 Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5μA (max.) Note 1: For detail information, please contact our sales.

Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average fo