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1SS396 Datasheet - Toshiba Semiconductor

1SS396 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 1SS396 Low Voltage High Speed Switching Unit: mm AEC-Q101 qualified (Note 1) Small package : SC-59 Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5μA (max.) Note 1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average fo.

1SS396 Datasheet (414.83 KB)

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Datasheet Details

Part number:

1SS396

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

414.83 KB

Description:

Silicon epitaxial schottky barrier type diode.

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1SS396 Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor

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