Datasheet4U Logo Datasheet4U.com

1SS397 Datasheet - Toshiba Semiconductor

1SS397 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: mm Small package : SC-70 Low forward voltage : VF = 1.0 V (typ.) High voltage : VR = 400 V (min) Fast reverse recovery time : trr = 0.5 μs (typ.) Small total capacitance : CT = 2.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum.

1SS397 Datasheet (615.66 KB)

Preview of 1SS397 PDF

Datasheet Details

Part number:

1SS397

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

615.66 KB

Description:

Silicon epitaxial planar type diode.

📁 Related Datasheet

1SS390 Band switching diode (Rohm)

1SS390 Band swithing diode (SEMTECH)

1SS390 SURFACE MOUNT PIN DIODE (PAN JIT)

1SS390SMFH Band Switching Diodes (ROHM)

1SS391 Silicon Diode (Toshiba Semiconductor)

1SS392 Silicon Diode (Toshiba Semiconductor)

1SS393 Silicon Diode (Toshiba Semiconductor)

1SS394 Silicon Diode (Toshiba Semiconductor)

1SS395 Silicon Diode (Toshiba Semiconductor)

1SS396 Silicon Epitaxial Schottky Barrier Type Diode (Toshiba Semiconductor)

TAGS

1SS397 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor

Image Gallery

1SS397 Datasheet Preview Page 2 1SS397 Datasheet Preview Page 3

1SS397 Distributor