1SS397 Datasheet - Toshiba Semiconductor

1SS397, Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: mm * Small package : SC-70

1SS397_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS397

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

615.66 KB

Description:

Silicon Epitaxial Planar Type Diode

Applications

* 1SS397 Unit: mm
* Small package : SC-70
* Low forward voltage : VF = 1.0 V (typ. )
* High voltage : VR = 400 V (min)
* Fast reverse recovery time : trr = 0.5 μs (typ. )
* Small total capacitance : CT = 2.5 pF (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Sy

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1SS397 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor

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