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1SS397 Silicon Epitaxial Planar Type Diode

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Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: mm * Small package : SC-70

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Applications

* 1SS397 Unit: mm
* Small package : SC-70
* Low forward voltage : VF = 1.0 V (typ. )
* High voltage : VR = 400 V (min)
* Fast reverse recovery time : trr = 0.5 μs (typ. )
* Small total capacitance : CT = 2.5 pF (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Sy

1SS397 Distributors

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1SS397 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor
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