1SS395 Datasheet (Toshiba Semiconductor)

1SS395, Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 mA 1A 100 mW Junction temperature Tj 125 °C S