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1SS395 Silicon Diode

1SS395 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage:.

1SS395 Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Silicon Diode Toshiba Semiconductor
Toshiba Semiconductor 1SS395-like datasheet