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1SS399 Datasheet - Toshiba Semiconductor

1SS399 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS399 High Voltage Switching Applications 1SS399 Unit: mm Small package : SC-61 Low forward voltage : VF(2) = 1.0 V (typ.) Fast reverse recovery time : trr = 0.5 μs (typ.) Small total capacitance : CT = 2.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 mA Aver.

1SS399 Datasheet (885.25 KB)

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Datasheet Details

Part number:

1SS399

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

885.25 KB

Description:

Silicon epitaxial planar type diode.

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1SS399 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor

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