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1SS399 Silicon Epitaxial Planar Type Diode

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Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS399 High Voltage Switching Applications 1SS399 Unit: mm * Small package : SC-61 * Low forwa.

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Applications

* 1SS399 Unit: mm
* Small package : SC-61
* Low forward voltage : VF(2) = 1.0 V (typ. )
* Fast reverse recovery time : trr = 0.5 μs (typ. )
* Small total capacitance : CT = 2.5 pF (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) re

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1SS399 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor
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