2SC5174 Datasheet - Toshiba Semiconductor

2SC5174 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5174 Power Amplifier Applications Driver Stage Amplifier Applications 2SC5174 Unit: mm High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1932 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Base current IB 0.1 A Collector power dissipation Juncti.

2SC5174-ToshibaSemiconductor.pdf