2SC5176 Datasheet - Toshiba Semiconductor

2SC5176 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current Switching Applications DC-DC Converter Applications 2SC5176 Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High-speed switching: tstg = 1.0 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissip.

2SC5176_ToshibaSemiconductor.pdf