TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current Switching Applications DC-DC Converter Applications 2SC5176 Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High-speed switching: tstg = 1.0 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissip
2SC5176_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SC5176
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
134.39 KB
Description:
Npn transistor.