2SC5199 NPN TRANSISTOR

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications 2SC5199 Unit: mm * High breakdown voltage: VCEO = 1.

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Datasheet Specifications

Part number: 2SC5199
Manufacturer: Toshiba ↗ Semiconductor
File Size: 116.71 KB
Datasheet: 2SC5199_ToshibaSemiconductor.pdf
Description: NPN TRANSISTOR

Applications

* 2SC5199 Unit: mm
* High breakdown voltage: VCEO = 160 V (min)
* Complementary to 2SA1942
* Suitable for use in 80-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-e

2SC5199 Distributors

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2SC5199 NPN TRANSISTOR Toshiba Semiconductor

Toshiba Semiconductor 2SC5199-like datasheet