2SC5199 Datasheet - Toshiba Semiconductor

2SC5199 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications 2SC5199 Unit: mm High breakdown voltage: VCEO = 160 V (min) Complementary to 2SA1942 Suitable for use in 80-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) VCB.

2SC5199 Datasheet (116.71 KB)