2SK3397 Datasheet - Toshiba Semiconductor

2SK3397 N-Channel MOSFET

2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) High forward transfer admittance: Yfs = 110 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Drain-source voltage Dra.

2SK3397_ToshibaSemiconductor.pdf