2SK3398 Datasheet - Toshiba Semiconductor

2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3398 Switching Regulator and DC-DC Converter Applications and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 9.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain