2SK3396 N-Channel MOSFET

Panasonic Semiconductor

Description

Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For infrared sensor <.

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Datasheet Specifications

Part number: 2SK3396
Manufacturer: Panasonic Semiconductor
File Size: 72.18 KB
Datasheet: 2SK3396_PanasonicSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Low gate-source cutoff current IGSS
* Small capacitance of short-circuit forward transfer capacitance (common source) Ciss , short-circuit output capacitance (common source) Coss , reverse transfer capacitance (common source) Crss 0.33+0.05
* 0.02 3 0.10+0.05
* 0.02

Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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2SK3396 N-Channel MOSFET Panasonic Semiconductor

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