MG150J1ZS50 Datasheet (Toshiba Semiconductor)

MG150J1ZS50, Silicon N Channel IGBT

MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case.

l High input impedance l Includes a complete half bridge in one package.

l Enhancement-mode l High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Unit: mm Equivalent Circuit JEDEC JEITA TOSHIBA ― ― 2-95A3A www.DataSheet4U.com Maximum Ratings