Datasheet Specifications
- Part number
- MG150J1ZS50
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 252.41 KB
- Datasheet
- MG150J1ZS50_ToshibaSemiconductor.pdf
- Description
- Silicon N Channel IGBT
Description
MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications l The electrodes are i.
Applications
* Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) UMG150J1ZS50 Distributors
📁 Related Datasheet
📌 All Tags