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MG150J1ZS50 - Silicon N Channel IGBT

MG150J1ZS50 Description

MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications l The electrodes are i.

MG150J1ZS50 Applications

* Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) U

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Silicon Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor MG150J1ZS50-like datasheet

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