MG150J1ZS50 Datasheet - Toshiba Semiconductor

MG150J1ZS50 Silicon N Channel IGBT

MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Unit: mm Equivalent Circuit JEDEC JEITA TOSHIBA ― ― 2-95A3A www.DataSheet4U.com Maximum Ratings.

MG150J1ZS50_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG150J1ZS50

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

252.41 KB

Description:

Silicon n channel igbt.

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MG150J1ZS50 MG150J1ZS50 Silicon Channel IGBT Toshiba Semiconductor