Datasheet Details
- Part number
- MG150J2YS50
- Manufacturer
- Toshiba ↗
- File Size
- 212.94 KB
- Datasheet
- MG150J2YS50_ToshibaSemiconductor.pdf
- Description
- N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG150J2YS50 Description
TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 MG150J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The elec.
MG150J2YS50 Applications
* Motor Control Applications
Unit: mm
l The electrodes are isolated from case
l High input impedance
l Includes a complete half bridge in one package
l Enhancement-mode
l High speed
: tf = 0.30µs (Max) (IC = 150A) trr = 0.15µs (Max) (IF = 150A)
l Low saturation voltage : VCE (sat) = 2.70V (Max
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