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MG150J2YS50 Datasheet - Toshiba

MG150J2YS50 N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 MG150J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case l High input impedance l Includes a complete half bridge in one package l Enhancement-mode l High speed : tf = 0.30µs (Max) (IC = 150A) trr = 0.15µs (Max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 150A) Equivalent Circuit JEDEC EIAJ TOSHIBA ― ― 2-95A1A Maximum Ratings (Ta = 25°C) C.

MG150J2YS50_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG150J2YS50

Manufacturer:

Toshiba ↗

File Size:

212.94 KB

Description:

N channel igbt (high pwer switching / motor control applications).

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MG150J2YS50 MG150J2YS50 CHANNEL IGBT HIGH PWER SWITCHING MOTOR CONTROL APPLICATIONS Toshiba

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