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MG150J1BS11 Datasheet - Toshiba

MG150J1BS11 N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)

TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP P.

MG150J1BS11_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG150J1BS11

Manufacturer:

Toshiba ↗

File Size:

163.28 KB

Description:

N channel igbt (high pwer switching / motor control applications).

MG150J1BS11 Distributor

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MG150J1BS11 MG150J1BS11 CHANNEL IGBT HIGH PWER SWITCHING MOTOR CONTROL APPLICATIONS Toshiba