MG150Q2YS40 Datasheet - Toshiba

MG150Q2YS40 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l Includes a complate half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ.) ― ― 2-109C1A Maximum Ratings (Ta = 25°C) Characteristics Collec.

MG150Q2YS40_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG150Q2YS40

Manufacturer:

Toshiba ↗

File Size:

195.25 KB

Description:

N channel igbt (high power switching / motor control applications).

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MG150Q2YS40 MG150Q2YS40 CHANNEL IGBT HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS Toshiba

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