Datasheet Details
- Part number
- MG150Q2YS40
- Manufacturer
- Toshiba ↗
- File Size
- 195.25 KB
- Datasheet
- MG150Q2YS40_ToshibaSemiconductor.pdf
- Description
- N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG150Q2YS40 Description
TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm l High inp.
MG150Q2YS40 Applications
* Motor Control Applications
Unit: mm
l High input impedance l High speed : tf = 0.5µs (max)
trr = 0.5µs (max) l Low saturation voltage
: VCE (sat) = 4.0V (max) l Enhancement-mode l Includes a complate half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit
JEDEC JEI
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