Part number:
MG150Q2YS50
Manufacturer:
File Size:
253.60 KB
Description:
N channel igbt (high power switching / motor control applications).
MG150Q2YS50_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
MG150Q2YS50
Manufacturer:
File Size:
253.60 KB
Description:
N channel igbt (high power switching / motor control applications).
MG150Q2YS50, N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 MG150Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EITA TOSHIBA Weight: 255g Characteristic Collector-emitter voltage Gate-
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