MG150Q2YS65H Datasheet - Toshiba Semiconductor

MG150Q2YS65H High Power & High Speed Switching Applications

MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit www.DataSheet4U.com E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ.) ― ― 2-95A4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM .

MG150Q2YS65H_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG150Q2YS65H

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

190.00 KB

Description:

High power & high speed switching applications.

MG150Q2YS65H Distributor

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MG150Q2YS65H MG150Q2YS65H High Power High Speed Switching Applications Toshiba Semiconductor