MG150Q2YS65H Datasheet (Toshiba Semiconductor) - High Power & High Speed Switching Applications

MG150Q2YS65H, High Power & High Speed Switching Applications

MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm High input impedance Enhancement-mode The electrodes are isolated from case.

Equivalent Circuit www.DataSheet4U.com E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ.) ― ― 2-95A4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM