MG150Q2YS65H

High Power & High Speed Switching Applications

Toshiba Semiconductor

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MG150Q2YS65H

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Toshiba ↗ Semiconductor

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190.00 KB

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Description:

High power & high speed switching applications.
MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switch.
ing Applications Unit: mm * High input impedance * Enhancement-mode * The electrodes are isolated f.

✔ MG150Q2YS65H Application

Unit: mm
High input impedance
Enhancement-mode
The electrodes are isolated from case. Equivalent Cir

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MG150Q2YS65H High Power High Speed Switching Applications Toshiba Semiconductor

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✔ MG150Q2YS65H Application

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