MG150Q2YS65H High Power & High Speed Switching Applications

Toshiba Semiconductor

Description

MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm * High input impeda.

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Datasheet Specifications

Part number: MG150Q2YS65H
Manufacturer: Toshiba ↗ Semiconductor
File Size: 190.00 KB
Datasheet: MG150Q2YS65H_ToshibaSemiconductor.pdf
Description: High Power & High Speed Switching Applications

Applications

* Unit: mm
* High input impedance
* Enhancement-mode
* The electrodes are isolated from case. Equivalent Circuit www. DataSheet4U. com E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ. ) ― ― 2-95A4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage G

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MG150Q2YS65H High Power High Speed Switching Applications Toshiba Semiconductor

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