Datasheet Specifications
- Part number
- MG150Q2YS51
- Manufacturer
- Toshiba ↗
- File Size
- 255.70 KB
- Datasheet
- MG150Q2YS51_ToshibaSemiconductor.pdf
- Description
- N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Description
TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 MG150Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High inp.
Applications
* Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit Maximum RatMG150Q2YS51 Distributors
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