MG150Q2YS51 Datasheet - Toshiba

MG150Q2YS51 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 MG150Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 430g Characteristic Collector-emitter voltage Gate-.

MG150Q2YS51_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG150Q2YS51

Manufacturer:

Toshiba ↗

File Size:

255.70 KB

Description:

N channel igbt (high power switching / motor control applications).

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MG150Q2YS51 MG150Q2YS51 CHANNEL IGBT HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS Toshiba

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