Datasheet4U Logo Datasheet4U.com

MG150Q2YS51 - N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)

MG150Q2YS51 Description

TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 MG150Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High inp.

MG150Q2YS51 Applications

* Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit Maximum Rat

📥 Download Datasheet

Preview of MG150Q2YS51 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • MG150Q2YS65H - High Power & High Speed Switching Applications (Toshiba Semiconductor)
  • MG150Q2YK1 - TRANSISTOR MODULES (ETC)
  • MG150J1ZS50 - Silicon N Channel IGBT (Toshiba Semiconductor)
  • MG150J7KS60 - GTR MODULE SILICON N CHANNEL IGBT (Toshiba Semiconductor)
  • MG150J7KS61 - High Power Switching Applications Motor Control Applications (Mitsubishi Electric)
  • MG150M2YK1 - TRANSISTOR MODULES (ETC)
  • MG1588A - LED DOT MATRIX DISPLAY (Micro)
  • MG1588C - LED DOT MATRIX DISPLAY (Micro)

📌 All Tags

Toshiba MG150Q2YS51-like datasheet

MG150Q2YS51 Stock/Price