Part number:
MG150Q2YS51
Manufacturer:
File Size:
255.70 KB
Description:
N channel igbt (high power switching / motor control applications).
MG150Q2YS51_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
MG150Q2YS51
Manufacturer:
File Size:
255.70 KB
Description:
N channel igbt (high power switching / motor control applications).
MG150Q2YS51, N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 MG150Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 430g Characteristic Collector-emitter voltage Gate-
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