MG150J7KS50 Datasheet (Toshiba) - TOSHIBA GTR Module Silicon N Channel IGBT

MG150J7KS50, TOSHIBA GTR Module Silicon N Channel IGBT

MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications l l l l l The electrodes are isolated from case.

High input impedance 7 IGBTs built into 1 package.

Enhancement-mode High speed type IGBT : : : : Outline Weight: 520g Inverter stage VCE (sat) = 2.8V (max) (@IC = 150A) tf = 0.5µs (max) (@IC = 150A) trr = 0.3µs (max) (@IF = 150A) l l : TOSHIBA 2-110A1B Equivalent Circuit 1 2001-08-16 MG150J7KS50 Inverter Stage Maxim