MG150J7KS50 Datasheet - Toshiba

MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT

MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications l l l l l The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT : : : : Outline Weight: 520g Inverter stage VCE (sat) = 2.8V (max) (@IC = 150A) tf = 0.5µs (max) (@IC = 150A) trr = 0.3µs (max) (@IF = 150A) l l : TOSHIBA 2-110A1B Equivalent Circuit 1 2001-08-16 MG150J7KS50 Inverter Stage Maxim.

MG150J7KS50_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG150J7KS50

Manufacturer:

Toshiba ↗

File Size:

119.23 KB

Description:

Toshiba gtr module silicon n channel igbt.

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MG150J7KS50 MG150J7KS50 TOSHIBA GTR Module Silicon Channel IGBT Toshiba