MT3S12T Datasheet - Toshiba Semiconductor

MT3S12T Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12T VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications Superior performance in oscillator applications. Superior noise characteristics : NF = 1.7 dB, |S21e|2 = 4.5 dB (f = 2 GHz) MT3S12T Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction.

MT3S12T-ToshibaSemiconductor.pdf

MT3S12T Datasheet Preview — Preview of MT3S12T PDF

Datasheet Details

Part number:

MT3S12T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

128.18 KB

Description:

Silicon npn epitaxial planar type transistor.

📁 Related Datasheet

MT3S12FS Silicon NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)

MT3S106FS Silicon-Germanium NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)

MT3S107FS Silicon-Germanium NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)

MT3S108FS Silicon-Germanium NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)

MT3S111 Silicon-Germanium NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)

MT3S111P Silicon-Germanium NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)

MT3S111TU Silicon-Germanium NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)

MT3S113 Silicon-Germanium NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)

TAGS

MT3S12T MT3S12T Silicon NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

MT3S12T Distributor