MT3S111P Silicon-Germanium NPN Epitaxial Planar Type Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications .

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Datasheet Specifications

Part number: MT3S111P
Manufacturer: Toshiba ↗ Semiconductor
File Size: 200.39 KB
Datasheet: MT3S111P-ToshibaSemiconductor.pdf
Description: Silicon-Germanium NPN Epitaxial Planar Type Transistor

Features

* Low-Noise Figure: NF=0.95 dB (typ. ) (@f=1 GHz)
* High Gain: |S21e|2=10.5 dB (typ. ) (@f=1 GHz) Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit PW-Mini JEDEC ⎯ JEITA SC-62 TOSHIBA 2-5K1A Weight:0.05 g (typ. ) Collector-emitt

MT3S111P Distributors

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MT3S111P Silicon-Germanium NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

Toshiba Semiconductor MT3S111P-like datasheet