Part number:
MT3S111P
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
200.39 KB
Description:
Silicon-germanium npn epitaxial planar type transistor.
MT3S111P Datasheet (200.39 KB)
* Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz)
* High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit PW-Mini JEDEC ⎯ JEITA SC-62 TOSHIBA 2-5K1A Weight:0.05 g (typ.) Collector-emitt
MT3S111P Datasheet (200.39 KB)
MT3S111P
Toshiba ↗ Semiconductor
200.39 KB
Silicon-germanium npn epitaxial planar type transistor.
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