MT3S113P Datasheet - Toshiba Semiconductor

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MT3S113P Silicon-Germanium NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit.

MT3S113P-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MT3S113P

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

223.15 KB

Description:

Silicon-Germanium NPN Epitaxial Planar Type Transistor

Features

* Low Noise Figure:NF = 1.15dB (typ. ) (@ f=1GHz)
* High Gain:|S21e|2 = 10.5dB (typ. ) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight : 0.05 g ( typ. ) Collector-emitter volt

MT3S113P Distributors

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MT3S113P Silicon-Germanium NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

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