MT3S113P Silicon-Germanium NPN Epitaxial Planar Type Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit.

📥 Download Datasheet

MT3S113P Datasheet Preview — Preview of MT3S113P PDF

Datasheet Specifications

Part number: MT3S113P
Manufacturer: Toshiba ↗ Semiconductor
File Size: 223.15 KB
Datasheet: MT3S113P-ToshibaSemiconductor.pdf
Description: Silicon-Germanium NPN Epitaxial Planar Type Transistor

Features

* Low Noise Figure:NF = 1.15dB (typ. ) (@ f=1GHz)
* High Gain:|S21e|2 = 10.5dB (typ. ) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight : 0.05 g ( typ. ) Collector-emitter volt

MT3S113P Distributors

📁 Related Datasheet

MT3S20P MT3S20TU MT30033S MT3004 MT30046S MT30058S

📌 All Tags

MT3S113P Silicon-Germanium NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

Toshiba Semiconductor MT3S113P-like datasheet