Part number:
MT3S113P
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
223.15 KB
Description:
Silicon-germanium npn epitaxial planar type transistor.
MT3S113P-ToshibaSemiconductor.pdf
Datasheet Details
MT3S113P Features
* Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight : 0.05 g ( typ.) Collector-emitter volt
MT3S113P-ToshibaSemiconductor.pdf
Datasheet Details
MT3S113P
Toshiba ↗ Semiconductor
223.15 KB
Silicon-germanium npn epitaxial planar type transistor.
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