MT3S113 Datasheet - Toshiba Semiconductor

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MT3S113 Silicon-Germanium NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications MT3S113 Unit: mm.

MT3S113-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MT3S113

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

242.79 KB

Description:

Silicon-Germanium NPN Epitaxial Planar Type Transistor

Features

* Low Noise Figure:NF=1.15dB (typ. ) (@ f=1GHz)
* High Gain:|S21e|2=11.8dB (typ. ) (@ f=1GHz) Marking R7 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012

MT3S113 Distributors

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MT3S113 Silicon-Germanium NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

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