* Low Noise Figure:NF=1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2=11.8dB (typ.) (@ f=1GHz) Marking R7 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012
MT3S113
Toshiba ↗ Semiconductor
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Silicon-germanium npn epitaxial planar type transistor.
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications MT3S113 Unit: mm.
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